Samsung Electronics recently entered into an agreement, valued at over $200 billion, with Broadcom to expand collaboration across memory chips, foundry and advanced packaging technologies through to 2030.
The pair signed a memorandum of understanding at the AI Summit in San Francisco, with the South Korean vendor explaining the tie-up aims to deliver “integrated semiconductor solutions for the AI era”.
Under the agreement, the partners will collaborate on high bandwidth memory (HBM) for Broadcom’s next-generation AI accelerators.
On the foundry side, Broadcom will tap Samsung’s 2-nanometre and below process technologies for products including Wireless Broadband Communications (WBC) solutions.
The pair also plan to work on advanced packaging, including 2.3D and 2.5D integration, to improve AI and networking chip performance and power efficiency.
Samsung Device Solutions vice chairman and CEO Young Hyun Jun said AI is driving “unprecedented demand for tightly integrated semiconductor technologies spanning memory, logic and advanced packaging”, adding working with Broadcom would help “deliver greater value to customers while advancing the AI infrastructure of the future”.
Broadcom Semiconductor Solutions Group president Charlie Kawwas said “close collaboration across the semiconductor ecosystem becomes increasingly important” as AI infrastructure scales.
The five-year pact marks a push by Samsung to close the gap with foundry leader TSMC by securing commitments from major chipmakers such as Broadcom and Qualcomm, potentially bolstering the vendor’s position in the race to supply AI chips.
Reuters reported last month that Jun discussed foundry cooperation with Nvidia CEO Jensen Huang, including future HBM4E and HBM5 memory products. Last year, Samsung also landed a $16.5 billion contract to supply chips to Tesla, along with a separate deal to manufacture an AI-enhanced modem chip for Starlink.
Source: Mobile World Live
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Source: Tahawul Tech